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| NEW PRODUCT NEW PRODUCT NEW PRODUCT MMBT3906 SMALL SIGNAL TRANSISTORS (PNP) SOT-23 .122 (3.1) .118 (3.0) .016 (0.4) 3 .056 (1.43) .052 (1.33) FEATURES PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Top View As complementary type, the NPN transistor MMBT3904 is recommended. This transistor is also available in the TO-92 case with the type designation 2N3906. 1 2 max. .004 (0.1) .007 (0.175) .005 (0.125) .037(0.95) .037(0.95) .045 (1.15) .037 (0.95) MECHANICAL DATA Case: SOT-23 Plastic Package Weight: approx. 0.008g Marking code: 2A .016 (0.4) .016 (0.4) .102 (2.6) .094 (2.4) Dimensions in inches and (millimeters) Pin configuration 1 = Base, 2 = Emitter, 3 = Collector. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25C ambient temperature unless otherwise specified SYMBOL VALUE UNIT Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation at TA = 25 C VCBO VCEO VEBO IC Ptot 40 40 5.0 200 225 (1) 300 (2) V V V mA mW mW C/W C/W C C Thermal Resistance Junction to Substrate Backside Thermal Resistance Junction to Ambient Air Junction Temperature Storage Temperature Range NOTES: (1) Device on fiberglass subtrate, see layout (2) Device on alumina substrate RqSB RqJA Tj TS 320 (1) 450 (1) 150 55 to +150 1/5/99 MMBT3906 ELECTRICAL CHARACTERISTICS Ratings at 25C ambient temperature unless otherwise specified SYMBOL MIN. MAX. UNIT Collector-Base Breakdown Voltage at IC = 10 mA, IE = 0 Collector-Emitter Breakdown Voltage at IC = 1 mA, IB = 0 Emitter-Base Breakdown Voltage at IE = 10 mA, IC = 0 Collector Saturation Voltage at IC = 10 mA, IB = 1 mA at IC = 50 mA, IB = 5 mA Base Saturation Voltage at IC = 10 mA, IB = 1 mA at IC = 50 mA, IB = 5 mA Collector-Emitter Cutoff Current at VEB = 3 V, VCE = 30 V Emitter-Base Cutoff Current at VEB = 3 V, VCE = 30 V DC Current Gain at VCE = 1 V, IC = at VCE = 1 V, IC = at VCE = 1 V, IC = at VCE = 1 V, IC = at VCE = 1 V, IC = 0.1 mA 1 mA 10 mA 50 mA 100 mA V(BR)CBO V(BR)CEO V(BR)EBO VCEsat VCEsat VBEsat VBEsat ICEV IEBV hFE hFE hFE hFE hFE hie fT CCBO CEBO 40 40 5 60 80 100 60 30 1 250 0.25 0.4 0.85 0.95 50 50 300 10 4.5 10 V V V V V V V nA nA kW MHz pF pF Input Impedance at VCE = 10 V, IC = 1 mA, f = 1 kHz Gain-Bandwidth Product at VCE = 20 V, IC = 10 mA, f = 100 MHz Collector-Base Capacitance at VCB = 5 V, f = 100 kHz Emitter-Base Capacitance at VEB = 0.5 V, f = 100 kHz MMBT3906 ELECTRICAL CHARACTERISTICS Ratings at 25C ambient temperature unless otherwise specified SYMBOL MIN. MAX. UNIT Voltage Feedback Ratio at VCE = 10 V, IC = 1 mA, f = 1 kHz Small Signal Current Gain at VCE = 10 V, IC = 1 mA, f = 1 kHz Output Admittance at VCE = 1 V, IC = 1 mA, f = 1 kHz Noise Figure at VCE = 5 V, IC = 100 mA, RG = 1 kW, f = 10 E 15 000 Hz Delay Time (see Fig. 1) at IB1 = 1 mA, IC = 10 mA Rise Time (see Fig. 1) at IB1 = 1 mA, IC = 10 mA Storage Time (see Fig. 2) at IB1 = IB2 = 1 mA, IC = 10 mA Fall Time (see Fig. 2) at IB1 = IB2 = 1 mA, IC = 10 mA hre 0.5 a 104 8 a 104 hfe 100 400 hoe 1 40 mS NF 4 dB td 35 ns tr 35 ns ts 225 ns tf 75 ns Fig. 1: Test circuit for delay and rise time * total shunt capacitance of test jig and connectors 0.30 (7.5) 0.12 (3) Fig. 2: Test circuit for storage and fall time * total shunt capacitance of test jig and connectors .04 (1) .08 (2) .04 (1) .08 (2) 0.59 (15) 0.47 (12) 0.03 (0.8) 0.2 (5) Dimensions in inches and (millimeters) 0.06 (1.5) 0.20 (5.1) |
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